| 摘要 |
PURPOSE:To obtain a photoconductive material superior in light fatigue resistance and durability, and high in photosensitivity, by specifying layer structure of the photoconductive material having specified amorphous silicon photoconductive layers. CONSTITUTION:A photoconductive material 100 consists of a substrate 101 and an amorphous material composed mainly of Si, as follows: A first layer 102 having photoconductivity, a second layer 107 contg. Si, H, and C up to 30 atomic%, as constituents. The layer 102 has a first layer region 103 contg. 0 as a constituent element in an uneven and continuous distribution state in the thickness direction, and a second layer region 104 contg. an element of group III in a uniform and continuous distribution state in the thickness direction as a constituent element, and the layer 103 is located under the surface of the layer 102. |
