发明名称 Temperature compensation apparatus for logic gates
摘要 A temperature compensation circuit enables the reliable operation of semiconductor logic gates over wide temperature ranges. The temperature compensation circuit includes a thin film resistor in series with an implanted resistor, both located on the same semiconductor substrate and both having one terminal connected together. The other terminal of one of the resistors is coupled to a point of reference potential, while the other terminal of the other resistor is coupled to an operating potential. A voltage is provided at the junction between the two resistors, which voltage is coupled to the logic gates. The voltage serves as a pull-down source and tracks over the wide temperature range to enable the logic gate to reliably operate with an adequate noise margin over temperature ranges between -55 DEG C. to +125 DEG C.
申请公布号 US5144405(A) 申请公布日期 1992.09.01
申请号 US19910744311 申请日期 1991.08.13
申请人 ITT CORPORATION 发明人 NABER, JOHN F.
分类号 H01L27/02 主分类号 H01L27/02
代理机构 代理人
主权项
地址