| 摘要 |
A semiconductor integrated circuit according to the present invention has a series circuit of a first field effect transistor and a load which is connected between a first potential point and a second potential point. The first field effect transistor operates in response to a control signal inputted in a gate thereof, whereby a high-level or low-level output signal is extracted from a node between the first field effect transistor and the load to output terminal. A second field effect transistor is also connected between the output terminal and the first potential point. Thus, when a surge causing the first field effect transistor to break down is applied to the output terminal, the second field effect transistor conducts to pass a surge current, whereby the first field effect transistor is prevented from being broken down.
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