| 摘要 |
An apparatus for depositing a thin film of amorphous or polycrystalline silicon on substrates by a low-pressure chemical vapor deposition process includes a high-speed pump device connected to one end of a vapor deposition chamber and operative to maintain in the vapor deposition chamber a pressure at or below 20 milliTorr, an inlet adjacent the other end of the chamber for introducing gas into the chamber such that the gas flows from the gas inlet toward the pump device, and a substrate support within the vapor deposition chamber for orientating the major faces of the substrates substantially perpendicularly to the gas flow direction, wherein the combined conductance of the vapor deposition chamber, substrate support, and substrates is at least ten times the conductance of the pump device.
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