摘要 |
<p>PURPOSE:To improve binding property of a plastic film substrate to a thin film lamination device, and prevent deterioration of properties caused by defective binding, by forming a thin film composed of two or more layers of inorganic material on the one side at least. CONSTITUTION:A film of SiOx(X=1.4) is deposited by an EB deposition method on a polyethlene terephthalate substrate, and a film of Si3N4 is deposited by sputtering. ITO is deposited on it by sputtering, and it is patterned to form an image element electrode 4. A is then deposited by a deposition method, and it is patterned to form a lower conductor 1. A rigid carbon film is deposited by plasma CVD method for an insulation film, and it is patterned by dry etching. Further, Ni is deposited by an EB deposition method, and it is patterned to form an upper conductor 3.</p> |