| 摘要 |
PURPOSE:To provide a manufacturing method of DRAM memory cell which is easy to manufacture with high yield, and excellent in breakdown strength and large in the volume of its capacitor. CONSTITUTION:The manufacturing method of DRAM memory according to the present invention is characterized in that at least one layer of thin metal films is formed on a substrate and then the surface of the thin metal film is directly oxidized, thereby forming a thin film of metal oxide on the surface of the aforesaid thin metal film. |
