MANUFACTURING METHOD OF LDD USING SLOPE TYPE GATE

摘要

The LDD (light doped drain) structure is manufactured by forming a field oxide (20) onto a Si substrate (10) to deposit a gate oxide (30) and poly-Si layer (40) thereon, inclined-etching the poly-Si layer (40) by applying an etching bias to form a slop gate (40a), depositing a low temp. oxide film (50) on the whole substrate to implant N+ ions (60) into the substrate to form an N+ source and drain region (70) and an N LDD region (80), depositing a boron phosphorus silicate glass layer (90) on the whole substrate, etching the films (50,90) and injecting a contact metal (100). The method reduces an N- ion implantation process and a side wall process to prevent a poly-channelling.