| 摘要 |
The method for producing an semiconductor device is characterized by depositing a first metal (Al) on the Si substrate, depositing Al-Si compound on the laminated layer, etching the Al-metal of the Al-Si layer with NH4F-added metal etchant to form a photoresist layer, and depositing an insulating layer and a second metal layer on the laminated layer, in order. The method makes a step coverage good on the deposition of the second metal, and gives a high yield.
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