| 摘要 |
The GaAs monocrystal manufacturing device has a suscepter (4) formed of the upper and lower separate sections (4a and 4b), the lower suscepter (4b) is raised as high as the level of the liquid sealing compound (6), and the remaining upper part is directly heated with the heater (9). The upper suscepter section (4a) covers the top surface of the crucible and the liquid sealing compound is directly and massively heated with the heater (9). The inside diameter of upper suscepter is ennarrowed, to prevent heat discipation and influx of carbon particles. The upper suscepter (4a) is adjustable to move up and down, thus control the diameter of crystal growth by adjusting the temperature of the sealing compound.
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