| 摘要 |
PURPOSE:To form a silicon oxide film whose interface is uneven, remove said silicon oxide film, expose the surface of a polycrystalline silicon film having uneven shape all over the uneven interface substantially on the opposite sides, form a dielectric film thereon, and increase the storage capacitance of a capacitor. CONSTITUTION:A 1500Angstrom thick silicon oxide film 7 is formed on the surface of a polycrystalline silicon film 6. The oxide film 7 is removed by an HF solution and a rough surface of a polycrystalline silicon film 6 is exposed. Then, the polycrystalline silicon film 6 is anisotropic-etched and patterned into a specified electrode shape. A dielectric body 8 comprising 70Angstrom thick silicon oxide is formed on the rough surface of the polycrystalline silicon film 6 based on the CVD process, using silane and ammonia. Then, a polycrystalline silicon film 9 is formed on the dielectric body 8 based on the CVD process and doped with phosphorous, thereby producing a second electrode. |
