| 摘要 |
The border and scribe region of the semiconductor device for having a power stabilizing function without increasing the chip size comprises an n substrate (11), a device separating oxide film (12) formed on the substrate (11), an n-plus conductive diffusion region (13) formed between the film regions (12), a p-plus conductive diffusion region (14) formed between the films (12) and (13), a first insulation film (15) for covering the film (12) and the partial region (14), a separating insulation film (16), a power supply wiring film (17) formed on the region (14), a second insulation film (18) formed on the film (17) and connected to the film (16), and a nitride film (19) for covering the film (18).
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