| 摘要 |
The method for isolating between devices by using a trench to improve the integration and operating speed of semiconductor device comprises growing an epitaxial lyer (2) onto a buried layer (1) on a Si layer to deposit a thermal oxide film (3), a nitride film (4) and an oxide film (5) thereon, forming a trench pattern by using a photo mask process, to dry-etch the films (5,4,3,2,1) and Si layer to form a trench (7) to form an ion implantation region (6) for channel stop under the trench (7), removing the oxide layer (8a), etching the oxide layer (8a) to expose the nitride film (4) to form a photoresist film (9), etching the layers (4,3,2) of field area to deposit an oxide film (10), a nitride film (11) and a photoresist film (12), and etching the films (12,11,4,10,3) to flatten the upper surfaces of the layers (2,8,10).
|
