| 摘要 |
The semiconductor is mfd. by (a) forming a polyamide layer (2), a polysulfone layer (3), a silicon oxide layer (4) on the semiconductor substrate (1) in order, (b) forming a photosensitive layer (5) on the layer (4), (c) reactive ion etching the layer (4) with a carbon fluoride (CF4), (d) reactive ion etching the layers (2,3) with an oxygen (O2), (e) depositing a metal layer (6), (f) lifting-off the layer (3) in the n-methyl pyrrolidone, and (g) forming a polyamide layer (2'), a polysulfone layer (3'), a silicon oxide layer (4') and a photosensitive layer (5') on the flattened layers (2,6).
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