| 摘要 |
PURPOSE:To solve a problem in which, if the atomic number ratio of Cu to In in a CuInSe2 film is larger than '1', its crystal growth is excellent to obtain large crystalline grain but selenide of excessive Cu forms an isomerized state thereby to cause junction characteristics to be lost. CONSTITUTION:An isomerized state of selenide of Cu of a thin polycrystalline film is removed by forming a CuInSe2 thin polycrystalline film in which the atomic number ratio of the Cu to In is larger than '1' with large grain size of its crystal by a three source concurrent deposition method, a two-stage solid phase seleniding method or a two-stage vapor seleniding method, and then sputter etching it. |
