发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain a method with which an adjustment can be done for each unit of a semiconductor wafer of semiconductor device. CONSTITUTION:Semiconductor devices are formed on a semiconductor wafer, an adjustment resistor that adjusts the characteristics of the said semiconductor device is provide for each device on the semiconductor wafer, the pressure and temperature are changed by said each semiconductor wafer, the said adjustment resistor is adjusted with a fusing means while the characteristics are measured, the characteristics of the said semiconductor device are adjusted on the said semiconductor wafer, and, wafer the adjustment, the said semiconductor device is cut out by each piece. It is not necessary to regulate the semiconductor device with respect to temperature, making it possible to perform the process by each semiconductor wafer of the semiconductor device, with ease of adjustment process and possibility of further reduced size.
申请公布号 JPH04242978(A) 申请公布日期 1992.08.31
申请号 JP19910011457 申请日期 1991.01.08
申请人 MITSUBISHI ELECTRIC CORP 发明人 ARAKI TATSU
分类号 G01D3/028;G01L9/00;G01L27/00;H01L21/822;H01L27/04;H01L29/84 主分类号 G01D3/028
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