| 摘要 |
PURPOSE:To facilitate perfect electric continuity between an upper layer silicon plate and a support silicon plate and avoid a stray beam by a method wherein metal films which communication with the upper layer silicon plate and the support silicon plate electrically in second apertures are formed. CONSTITUTION:A mask pattern 5 is formed in an upper layer silicon plate 1 with a charged particle beam. First apertures 4a and 6a through which the charged particle beam is transmitted are formed in a support silicon plate 2 under the mask pattern 5. Second apertures 4b and 6b which reach the rear parts of the upper layer silicon plate 1 directly are formed in the support silicon plate 2 under the region where the mask pattern 5 is not formed. Conductive films 8 which communicate with the upper layer silicon plate 1 and the support silicon plate 2 electrically in the second apertures 4b and 6b are formed. With this constitution, charge-up of the upper layer silicon plate 1 is hardly created and a stray beam can be avoided. |
