| 摘要 |
<p>PURPOSE:To simplify a manufacturing process and reduce manufacturing cost with regards to a indication device drive thin film transistor matrix and its manufacturing method. CONSTITUTION:This invention relates to an indication device drive thin film transistor matrix having a plurality of thin film transistors formed on an insulation transparent board 1. Each thin film transistor has an operation semiconductor thin film 2, a source electrode 3, a drain electrode 4, a Schottky gate electrode 5, and a picture element electrode 6 which is connected with the source electrode 3. The Schottky gate 5 and the picture element electrode 6 are constituted by the indication device drive thin film matrix made of the same material.</p> |
