| 摘要 |
<p>PURPOSE:To perform lift-off of a film completely and in a short time to be formed on a separation layer at the time of cathode forming. CONSTITUTION:After an insulating layer 2 having a cavity 2a and a gate electrode 3 are formed on a substrate 1, vapor deposition is performed from the oblique direction to the substrate surface to form a separation layer 4 on a gate electrode 3 and subsequent vapor deposition from the vertical direction to the substrate surface forms a cathode 5 on the substrate 1 inside the cavity 2a. Next, a release groove 8 is formed on a film 6 formed on the separation layer 4 at the time of forming this cathode 5, and the separation layer 4 is exposed inside this release groove 8 followed by performing lift-off of the film 6.</p> |
