| 摘要 |
PURPOSE:To process the surface atoms at the speed same as in the measuring of an STM (scanning tunnel microscope) by adding an electric function necessary to process the surface atoms to a probe while scanning the probe in the scanning same as in the measuring of the STM. CONSTITUTION:Between a substrate 1 with an atomic arrangement and a probe 2, a voltage Vt is applied through a voltage control circuit 5, and a tunnel current it is generated. This current is detected by a tunnel current converter circuit 4, converted to a voltage signal by a current and voltage converter circuit 8, and the position of the probe 2 is varied to make the voltage constant. The variation amount in the X and Z directions of the probe 2 is stored in a memory device 6. Then, this locus signal is given to a probe drive mechanism 3, the substrate 1 is scanned, and at the same time, by applying a voltage Vm between the substrate 1 and the probe 2, the probe 2 can be scanned at a constant interval with the surface atoms as the probe 2 does not detect the tunnel current during processing the surface atoms, and a high speed surface atom processing can be carried out.
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