| 摘要 |
PURPOSE:To reduce the error of the capacitance ratio of a plurality of capacitive elements during the production thereof by forming tapers of predetermined angles at the angular parts of a unit capacitive element and its electrode leading part, thereby reducing the production error. CONSTITUTION:A reverse conductivity type diffused region 22 to the substrate is insularly formed on the main surface of the semiconductor substrate 24, and an insulating oxide film 23 having thin film of a unit capacitive element is formed thereon. Subsequently, a thin metal is covered on the film 23, metal electrodes 21 inclined at 45 deg. at the leading part and the angular part are selectively etched, and an MOS capacitive element 15 is formed. Since this can cancel the error in production at the time of selective etching and with angular part and the electrode leading part each other, the unit capacitive element having preferable relative accuracy between the capacitive elements can be obtained. |
