发明名称 LITHOGRAPHIC PROCESS OF ELECTRIC BEAM
摘要 The lithography process using a multi-layer resist film comprises spin-coating a first photoresist film (PR1) on a substrate to form a planarized layer for planarizing a exposure surface, spincoating an insulating film (I) on the photoresist (PR1) to form a protection layer, depositing a metallic thin film (M) on the film (I) by using a sputtering method to cover the electron loss upon irradiating electron beams and spin-coating a second photoresist film (PR2) on which a photoresist pattern is formed for a etching process.
申请公布号 KR920007188(B1) 申请公布日期 1992.08.27
申请号 KR19890020708 申请日期 1989.12.30
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG, HO - YONG
分类号 H01L21/30;(IPC1-7):H01L21/30 主分类号 H01L21/30
代理机构 代理人
主权项
地址