发明名称 |
LITHOGRAPHIC PROCESS OF ELECTRIC BEAM |
摘要 |
The lithography process using a multi-layer resist film comprises spin-coating a first photoresist film (PR1) on a substrate to form a planarized layer for planarizing a exposure surface, spincoating an insulating film (I) on the photoresist (PR1) to form a protection layer, depositing a metallic thin film (M) on the film (I) by using a sputtering method to cover the electron loss upon irradiating electron beams and spin-coating a second photoresist film (PR2) on which a photoresist pattern is formed for a etching process.
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申请公布号 |
KR920007188(B1) |
申请公布日期 |
1992.08.27 |
申请号 |
KR19890020708 |
申请日期 |
1989.12.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG, HO - YONG |
分类号 |
H01L21/30;(IPC1-7):H01L21/30 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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