| 摘要 |
A method for removing residues in manufacturing semiconductor device compirses (A) forming phtoresist pattern on patterned layer of semiconductor substrate, (B) generating undercut and residues, (C) doping with polymer, (D) forming sidewall polymer on undercut-generated pattern, (E) removing residues, and (F) completing prescribed pattern. Patterned layer is formed by growing or depositing polycrystalline silicon, nitride, oxide or metal. The polymer used has higher etching selectivity than that of photoresist. The sidewall polymer is formed by etching back.
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