| 摘要 |
PURPOSE:To obtain higher voltage resistance and to improve the reliability of a shift register without changing a process and without sacrificing the operating characteristics of transistors. CONSTITUTION:The diode-connected MOS transistors are connected to all nodes on a power source side and ground side of respective circuit blocks constituting the shift register, by which the signal level of internal transfer is lowered by as much as the threshold voltage-component of the above-mentioned diode- connected TRs on a high-level side and is raised by as much as the above- mentioned threshold voltage-component on a low level side. |
