| 发明名称 |
Method for etching silicon compound film and process for forming article by utilizing the method. |
| 摘要 |
<p>A method for etching a silicon compound film comprises etching the silicon compound film in a gas flow rate ratio of CHF3 to C2F6 of 1 to 6 under an etching pressure of 40 to 120 Pa. <IMAGE></p> |
| 申请公布号 |
EP0500069(A2) |
申请公布日期 |
1992.08.26 |
| 申请号 |
EP19920102750 |
申请日期 |
1992.02.19 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
KOYAMA, SHUJI;KASAMOTO, MASAMI;SHIBATA, MAKOTO |
| 分类号 |
H01L21/302;H01L21/3065;H01L21/311 |
主分类号 |
H01L21/302 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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