发明名称 METHOD FOR PRODUCING AN ELECTRONIC DEVICE HAVING A MULTI-LAYER STRUCTURE
摘要 <p>A method for producing an electronic device having a multi-layer structure comprising one or more valence electron controlled semiconductor thin layers formed on a substrate, comprises forming at least one of said valence electron controlled semiconductor thin layers according to the photo CVD method and forming at least one of other constituent layers according to the method comprising introducing a gaseous starting material for film formation and a gaseous halogenic oxidizing agent having the property of oxidizing said starting material into a reaction space to effect chemical contact therebetween to thereby form a plurality of precursors including a precursor in an excited state and transferring at least one of these precursors into a film forming space communicated with the reaction space as a feed source for the constituent element of the deposited film.</p>
申请公布号 EP0231660(B1) 申请公布日期 1992.08.26
申请号 EP19860310162 申请日期 1986.12.24
申请人 CANON KABUSHIKI KAISHA 发明人 OHTOSHI, HIROKAZU;HIROOKA, MASAAKI;HANNA, JUN-ICHI;SHIMIZU, ISAMU
分类号 H01L31/04;C23C16/44;C23C16/452;C23C16/48;C23C16/54;G03G5/08;G03G5/082;H01L21/205;H01L21/263;H01L21/336;H01L29/78;H01L29/786;H01L31/075;H01L31/20 主分类号 H01L31/04
代理机构 代理人
主权项
地址