| 摘要 |
PURPOSE:To increase breakdown strength and to reduce resistivity at room temperature by blending a barium titanate-based base composition containing a Curie point transfer substance with a specific semiconductor forming agent and burning. CONSTITUTION:A barium titanate-based base composition containing 0.1-30 wt. mol% Curie point transfer substance is blended with 10-70wt.% Sb2O5 sol adjusted to pH6-2, having 0.02-0.05mum particle diameter, as a semiconductor forming agent and optionally a mineralizer and a voltage-dependent stabilizer in the presence of water in a wet state for 1-25 hours. The blend is dried, calcined at 1,000-1,400 deg.C for 1-3 hours and ground to give a mixture. The mixture is molded and burnt at 1,300-1,400 deg.C for 0-10 hours. |
