SEMICONDUCTOR INTEGRATED CIRCUIT HAVING INTERCONNECTION WITH IMPROVED DESIGN FLEXIBILITY

摘要

A semiconductor integrated circuit comprises a substrate (51) of a first semiconductor type doped by a first impurity element with a first impurity density, the first semiconductor type being one of p-type and n-type semiconductors, a conductive layer (50) formed on a back surface of the substrate, a first layer (52) of a second semiconductor type doped by a second impurity element different from the first impurity element and formed on a front surface of the substrate, the second semiconductor type being the other of the p-type and n-type semiconductors and the first layer having a second impurity density lower than the first impurity density, a second layer (53) of the first semiconductor type formed on the first layer for forming circuit elements therein, a first region (54) of the second semiconductor type extending from a top surface of the first layer and reaching a top surface of the second layer, and a second region (55) of the first semiconductor type extending from a top surface of the substrate and reaching the top surface of said second layer, the first layer and the second region forming a conductive path for supplying a power source voltage to the circuit elements in the second layer from the back surface of the substrate.