| 摘要 |
PURPOSE:To obtd. the titled composition having a high silicon content and improved anti-oxygen plasma and anti-dry etching properties and resolution by incorporating a specific polysilsesquioxane to a specific styrene polymer. CONSTITUTION:The polysilsesquioxane which has a repeating unit shown by formula II, and contains at least one of alkenyl group as at least one of the repeating unit selected among the repeating units is incorporated to the specific styrene polymer having the repeating unit shown by formula I. In formula I, R<1>-R<3> are each the same or the different with each other, and are 1C-6C alkyl group or 2C-6C alkenyl group. At least one of R<1>-R<3> groups is alkenyl group. And, in formula II, R and R<1> are the same or the different with each other, and are alkyl, aryl or alkenyl group. Thus, the resist pattern having a high silicon content is obtd. |
