| 发明名称 |
SEMICONDUCTOR LIGHT EMITTING ELEMENT |
| 摘要 |
A semiconductor light emitting element with a high light-emitting efficiency, which is constituted in such a way that, of the composition of its GaN and AlN epitaxial layer, part of N is substituted by As, thus ensuring good lattice-matching with the substrate crystal, ZnO. <IMAGE> |
| 申请公布号 |
EP0487823(A3) |
申请公布日期 |
1992.08.26 |
| 申请号 |
EP19910110478 |
申请日期 |
1991.06.25 |
| 申请人 |
PIONEER ELECTRONIC CORPORATION |
发明人 |
OTA, HIROYUKI;WATANABE, ATSUSHI |
| 分类号 |
H01S5/00;H01S5/02;H01S5/323 |
主分类号 |
H01S5/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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