SEMICONDUCTOR STRUCTURE WITH POLYSILICON-LAND AND FORMING METHOD THEREOF

摘要

PURPOSE: To obtain a method for forming a conductive/resistive lamination polysilicon land by a semiconductor structure and a structure formed by the method. CONSTITUTION: A semiconductor structure is formed on a semiconductor substrate, has a set of first metal contact studs such as 30-1 in contact with at least one of active region 21/polysilicon lines such as 23-1, and contains first passivation thick films 26/27 whose surfaces are coplanar to those of the studs and a plurality of polysilicon lands such as 31-l that are formed on a planar structure and have a high resistance or a high conductivity or both properties bring in contact with the first contact studs.