发明名称 |
BRIDGED EMITTER DOPED-SILICIDE TRANSISTOR |
摘要 |
BRIDGED-EMITTER DOPED-SILICIDE TRANSISTOR A bridged-emitter doped-silicide transistor is formed using two orthogonal strips of electrically conductive material containing impurity which is introduced into the substrate after the strips are defined. The emitter is formed by impurity diffusing from a first strip into a silicon substrate in which the base region and collector region have previously been formed. The base electrode and contact regions to the extrinsic base are formed by impurity diffusing from a second strip, preferably boron-doped silicide, which is separated from the first strip by intervening insulating material. |
申请公布号 |
CA1306814(C) |
申请公布日期 |
1992.08.25 |
申请号 |
CA19890615270 |
申请日期 |
1989.09.29 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
VORA, MADHUKAR B. |
分类号 |
H01L29/73;H01L21/225;H01L21/331;H01L27/082;H01L29/423 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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