Low voltage, deep junction device and method

摘要

A method of fabricating a low voltage, deep junction semiconductor device includes providing first and second wafers of opposite conductivity types, each having a dopant concentration of at least 4.0x1016 atoms/cc. After cleaning the wafers and removing heavy metal impurities therefrom by gettering, the wafers are bonded together. This method results in the successful fabrication of semiconductor devices having a junction depth in the range of 20 to 500 microns and a breakdown voltage of less than 20 volts.