发明名称 |
Mixed ternary heterojunction solar cell |
摘要 |
A thin film heterojunction solar cell and a method of making it has a p-type layer of mixed ternary I-III-VI2 semiconductor material in contact with an n-type layer of mixed binary II-VI semiconductor material. The p-type semiconductor material includes a low resistivity copper-rich region adjacent the back metal contact of the cell and a composition gradient providing a minority carrier mirror that improves the photovoltaic performance of the cell. The p-type semiconductor material preferably is CuInGaSe2 or CuIn(SSe)2.
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申请公布号 |
US5141564(A) |
申请公布日期 |
1992.08.25 |
申请号 |
US19910644069 |
申请日期 |
1991.01.17 |
申请人 |
THE BOEING COMPANY |
发明人 |
CHEN, WEN S.;STEWART, JOHN M. |
分类号 |
H01L31/0336;H01L31/0392;H01L31/18 |
主分类号 |
H01L31/0336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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