发明名称 Photoelectric conversion semiconductor device
摘要 A first conductivity type first semiconductor layer is formed on an insulation substrate and a second conductivity type second semiconductor layer is formed on the first semiconductor layer in order to provide a semiconductor device having a highly reliable electrode structure. In order to accomplish this electrode structure, a first electrode which is insulated from the first semiconductor layer with an insulation film, is formed on an area extending from a part of the second semiconductor layer to an exposed surface of the insulation substrate which is not covered with the first semiconductor layer. A second electrode, which is separate from the second semiconductor layer, is formed on a part of the first semiconductor layer which is not covered with the second semiconductor layer. Using this construction, a solar battery cell can be realized. Additionally, the first electrode has a connection region on the exposed surface of the insulation substrate in order to provide connection with an external terminal. This enables welding or bonding with an external terminal on this particular connection region.
申请公布号 US5142331(A) 申请公布日期 1992.08.25
申请号 US19890295265 申请日期 1989.01.10
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 YOSHIDA, SUSUMU
分类号 H01L29/41;H01L31/0216;H01L31/0224;H01L31/05;H01L31/068;H01L31/10 主分类号 H01L29/41
代理机构 代理人
主权项
地址