| 摘要 |
PURPOSE:To increase a forward surge-proof property of FET to the same order as the backward surge-proof property of FET by a method wherein protective diodes having different zener voltages and being connected in series in the directions opposite to each other are provided between two gates and a source of the dual gate Schottky barrier type FET. CONSTITUTION:The protective diode is additionally connected to the dual gate Schottky barrier type FET comprising a first gate 1, source 2, second gate 3, drain 4. With this construction, for the diode 5, two diodes different in the zener voltages as V1, V2 (V1<V2) are connected in parallel and series for the construction, and connected in parallel between the first gate 1 and source 2 and between the second gate 3 and source 2 respectively. Thus, the surging energy absorbed by the diode 5 is increased, thereby enabling the surge withstand voltage in the forward direction to be improved to the order as high as the surge withstand voltage in the backward direction. |
