| 摘要 |
PURPOSE:To obtain a contact hole of stable shape with preferable reproducibility by forming a polycrystalline silicon film on an insulating film and etching the insulating film with the polycrystalline silicon film as a mask. CONSTITUTION:A phosphorus glass insulating film 16 is formed on the entire surface of a silicon substrate 11 having a diffused layer 12, and a polycrystalline silicon film 17 is formed thereon. Then, a hole 19 is formed at a photoresist film 18, and the film 17 is thus exposed. Then, a removing part 20 is formed at the film 17, and the film 16 is thus exposed. Thereafter, a plate-shaped cavity 21 is formed on the film 16. Subsequently, the film 17 at the side of the removing part 20 is sidewisely etched. After the film 18 is removed, the film 16 is etched through the removing part 20 expanded of the film 17, and a stepwide tapered contact hole 22 is formed on the film 16. |
