| 摘要 |
PURPOSE:To form a base having narrow width in the horizontal transistor by forming a base layer in contact with a buried diffused layer having low specific resistance to reduce the external base resistance and forming a base layer and an emitter layer through the same forming window. CONSTITUTION:A base layer 15 reaching a P<+> type buried diffused layer 13 at the bottom is formed in contact with a field SiO2 film 12 at the three sides at a collector layer 14 insulated from the substrate via a P<+> type buried diffused layer (external base layer) 13 formed to make contact with the bottom of the film 12 in the substrate 11. An emitter layer 18 self-aligned with the base layer 15 via the SiO2 film 17 on the field film 12 and the collector layer 14 used as a mask when forming the base layer 15 in the region in the vicinity of the layer 14 of the layer 15 is formed. |
