| 摘要 |
PURPOSE: To provide a method for fabricating a semiconductor laser in which the laser light can be limited without causing any damage on the surface of a layer by growing a second buffer layer epitaxially after implanting dopant ions. CONSTITUTION: A semiconductor laser diode comprises a first buffer layer 14, a second buffer layer 18' and a sandwiched active layer 16. The active layer contains dopant ions and emits a laser light having substantially single frequency characteristics through energy transition between an undoped material and implanted dopant ions in the active layer. Laser light to be emitted from the active layer is determined by two buffer layers. According to the invention, a thin second buffer layer 18 is grown, at first, on the active layer and dopant ions are implanted into the active layer through the thin second buffer layer and then the dopant is excited through annealing. Subsequently, the second buffer layer is grown sufficiently for limiting emission of light in the active layer.
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