发明名称 OXIDE SEMICONDUCTOR COMPOSITION
摘要 PURPOSE:To prevent generation of cracks on the surface and the internal part of a basic material by containing two or three kinds of elements of 100 atomic % in total as the metal element of specific oxide, indicating the ternary composition of the metal element by Gibbs compositional triangle and by having the crystal structure of cubic spinel single phase. CONSTITUTION:Three kinds of elements Mn, Co and Cu, or two kinds of elements Mn and Co of 100 atomic % are contained as the metal element of oxide, and the atomic % of Mn:Co:Cu=60:15:25 is designated as point A, 27.5:60:12.5% is designated as point B, 32.5:67.5:0% is designated as point C, and 45:55:0 is designated as point D When the area of the quadrilateral formed by linking four points is brought into the compositional ratio of metal element, most stabilized crystal phase can be obtained on the sintered body in the single and crystal structure of cubic crystal spinel in the air. As a result, the generation of cracks on the surface and the internal part of the element can be prevented, and the lowering of element strength can also be prevented.
申请公布号 JPH04233702(A) 申请公布日期 1992.08.21
申请号 JP19900416256 申请日期 1990.12.28
申请人 MITSUBISHI MATERIALS CORP 发明人 OI KOJI;NISHIMURA KEISUKE;TSUNODA MASAKIYO;KOSHIMURA MASAMI
分类号 C01G51/00;C04B35/00;C04B35/495;H01C7/00;H01C7/04 主分类号 C01G51/00
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