| 摘要 |
PURPOSE: To efficiently and stably switch a high voltage thin film transistor(TR) over its whole voltage area by connecting a thin film space potential limiting flow divider in parallel between the source electrode and the drain electrode of a low voltage TR. CONSTITUTION: The source electrode potential of a high voltage thin film TR (HVTFT) 16 is switched by a low voltage path TR 36 and a low voltage thin film switching TR(LVTFT) 38 to turra on/off the HVTFT 16 while maintaining its fixed potential. Since the floating gate of the LVTFT 38 is completely insulated from voltage variation over the wide range of the drain of the HVTFT 16, the efficiency of the switching operation is improved. The space charage limiting flow divider 40 connected to the LVTFT 38 in parallel guarantees a leakage route to reference potential and stabilizes characteristics. Thereby the HVTFT 16 can be efficiently and stably switched. |
