| 摘要 |
The chemical compound semiconductor is produced by (A) forming a first semiconductor layer on the substrate as buffer layer for MESFET (Metal Semiconductor Field Effect Transistor) and HEMT (High Electron Mobility Transistor), (B) forming a second and third semiconductors layer on the first semiconductor layer as spacer and source layers for HEMT, (C) forming a fourth semiconductor layer on first and third semiconductor layers as active layer for MESFET, (D) forming a fifth semiconductor layer on third and fouth semiconductor layers, (E) forming element separation region, (F) forming source and drain electodes on the fifth layer, and (G) forming gate electrodes on third and fourth layers.
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