| 摘要 |
PURPOSE: To provide a manufacturing method of an IC stage which is manufactured only by deposition of conductive material in one process, without a superfluous relief. CONSTITUTION: A dielectric layer 1 covers a mutual connection wire 5 and a connection point 4 which connects the connecting wire 5 with a conductive part 6 on the opposite side of the dielectric layer 1. In this manufacturing method, the entire dielectric layer 1 is formed with one process, and cavities are continuously formed at positions of the connection point and the mutual connecting wire, with two continuously arranged masks. Next, since the connecting point 4 and the connecting wire 5 are formed at the same time, the cavities are filled with conductive material by one process. This manufacturing method is simple, and the stage obtained is flat. |
