SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE: To provide a manufacturing method capable of manufacturing such a GaAs monolithic hetero-structured device on an Si photoelectric device. CONSTITUTION: An epitaxial layer, thick enough compared with a max. transverse width, is formed to produce a semiconductor device having a low dislocation defect density from an epitaxial layer grown on a high-defect density or irregular surface. Because of the enough film thickness, the screw thread dislocation at the interface does not reach the top surface of the epitaxial structure but escapes from its side face. This is utilized to form a directly deposited GaAs on an Si photoelectric device and parallel processor circuit, and to improve the yield of lasers and photo detectors.