| 摘要 |
PURPOSE:To form a diffusion region having various kinds of diffusion depth by one time heat-treating process in a semiconductor device. CONSTITUTION:An N-GaAsP layer 2 is crystal-grown on an N-GaAs substrate 1, and further diffusion mask SiN film 3 is formed. Said SiN film 3 is formed in a line type at several micron intervals, and further a ZnO film 4 as a diffusion source layer is laminated. In a region 3a where the SiN film is formed in a line type at several micrometer intervals, the contact area between the N-GaAsP layer 2 and the ZnO layer 4 is small, so that the supply speed of a diffusion source Zn at the time of heat-treating process is reduced as compared with the other region, and the diffusion depth of a diffusion region 5 becomes shallow. |
