DRY ETCHING METHOD FOR SEMICONDUCTOR WAFER'S UPPER LAYER

摘要

PURPOSE: To prevent low-temperature dry etching precipitation on a semiconductor substrate wafer for enabling low-temperature drying etching. CONSTITUTION: A method for preventing low-temperature dry etching precipitation on a semiconductor substrate wafer includes a step of maintaining sufficient power for a dry etching reaction furnace to maintain a gaseous plasma state in the reaction furnace and stopping reacting gas injection into the reaction furnace at the time when selective etching is effectively completed, and a step of in effect exhausting the reactive gas plasma from the reaction furnace before sufficiently reducing the power to the reaction furnace for maintaining the gaseous plasma state in the reaction furnace.