| 摘要 |
PURPOSE: To eliminate the need for separately forming an n<+> Ohmic layer, by depositing a first metal layer of a constant thickness in an atmosphere of PH3 mixed with Ar at a fixed ratio to thereby add PH3 a little, and second metal layer of a constant thickness is deposited on the first metal layer in an Ar gas atmosphere. CONSTITUTION: In a mixing chamber of a sputtering apparatus a first metal layer is deposited on a formed amorphous semiconductor layer 4 for specified time in a gas atmosphere of Ar 99% mixed with PH3 1% with maintaining a thickness of 500-1000Å, and a second metal layer is deposited up to a thickness of 3000-5000Åfor a specified time in an Ar atmosphere, using a Al, Cr, Mo, Ti or similar metal target. Since the first metal layer has such an effect as an Ohmic layer, no other step is needed for forming an n<+> Ohmic layer.
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