摘要 |
<p>PURPOSE: To reduce the dielectric const. and adhesiveness of a multilayer- structured dielectric layer for a high-density interconnection structure. CONSTITUTION: A high density interconnection structure 10 has a dielectric layer 20 disposed on a semiconductor chip 16, contact pads 181 , 182 and the surface of a substrate 12, and a laminate of three first layers 241 -243 and two second layers 261 , 262 mutually adhered and or laminated in the order of 241 , 261 , 242 , 262 and 243 . The dielectric layer 20 is adhered to the semiconductor chip 16, the contact pads 181 , 182 and the substrate 12 surface through a thermoplastic adhesive layer 22.</p> |