发明名称 DIELECTRIC LAYER OF MULTILAYER STRUCTURE, AND HIGH-DENSITY MUTUAL CONNEC- TION STRUCTURE, AND MANUFACTURE OF THAT STRUCTURE
摘要 <p>PURPOSE: To reduce the dielectric const. and adhesiveness of a multilayer- structured dielectric layer for a high-density interconnection structure. CONSTITUTION: A high density interconnection structure 10 has a dielectric layer 20 disposed on a semiconductor chip 16, contact pads 181 , 182 and the surface of a substrate 12, and a laminate of three first layers 241 -243 and two second layers 261 , 262 mutually adhered and or laminated in the order of 241 , 261 , 242 , 262 and 243 . The dielectric layer 20 is adhered to the semiconductor chip 16, the contact pads 181 , 182 and the substrate 12 surface through a thermoplastic adhesive layer 22.</p>
申请公布号 JPH04233297(A) 申请公布日期 1992.08.21
申请号 JP19910186972 申请日期 1991.07.02
申请人 GENERAL ELECTRIC CO <GE> 发明人 HAABETSUTO SUTANRII KOURU JIYUNIA;YAN SHIYANGU RIUU
分类号 H01L23/12;H01L23/522;H01L23/532;H01L23/538;H05K3/46 主分类号 H01L23/12
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