DRY ETCHING APPARATUS USING ELECTRON CYCLOTRON RESONANCE

摘要

A grid having ground level is deposited between a plasma discharging cavity and an etching process cavity to form a RF bias applied ECR etching apparatus and the grid is moved up and down to change the mode of microwave. The apparatus includes a plasma discharging cavity (2) in which a gas discharge is occured, a wave guide (5) for guiding microwave having frequency of 2.45 GHz to the top of the cavity (2), a microwave generator having a structure to prevent damage of a magnetron due to reverse microwave, a solenoid magnetic coil (8) for providing magnetic flux density of 875 Gauss to generate divergent magnetic field, and a process cavity (1) for etching a semiconductor plate.