THIN JUNCTION MANUFACTURING METHOD OF CMOSFET WITH STACKED CAPACITOR

摘要

The method for forming a shallow junction of the source and drain of a CMOSFET connected to a stacked capacitor comprises: forming a gate electrode (6) on a P-substrate (1) having an N-well (3), a P- well (2), an insulation oxide film (4) and a gate oxide film (5); forming a charge storage electrode (9) thereon, forming a drain region (13') of a cell moving gate thereon to forming a stacked capacitor; forming source and drain regions (18,18') of a CMOSFET adjacent to the cell moving gate; thereby forming a shallow junction with a junction depth of less than 0.1 μs to improve the density of the semiconductor IC.