| 摘要 |
PURPOSE:To obtain a crystal having a high uniformity and a faborable reproducibility by a method wherein a quartz plate having a large area than a substrate is arranged at the upper stream side of the vapor growth gas current from the substrate, and the compound semiconductor is made to grow by disproportionation reaction. CONSTITUTION:A Ga source is arranged at the side of growth gas lead-in port in a reaction tube 1, the semiconductor substrate 2 is arranged at the lower stream side of the side of gas lead-out port, and the highly pure quartz plate 3 having the same area with or larger than the substrate is arranged at the upper stream side. The temperature at the region (a) of the source 4 is made to be 800 deg.C, and the temperature at the neighborhood (b) of the substrate 2 is made to be 700 deg.C settling the descending gradient of temperature to be less than 3 deg.C/cm. A carrier gas and the reaction gas (AsCl3) are sent from the gas lead-in port to make GaAs, etc., to grow on the substrate by disproportionation reaction. Accordingly the highly uniform vapor phase epitaxial growth layer of compound semiconductor can be formed having a faborable reproducibility. |
